MTFC256GAOAMEA-WT (Micron – 256 GB, UFS 2.2)
KLUDG4UHDC-B0E1 (Samsung – 128 GB, UFS 3.1)
THGJFGT1E45BAIL (Kioxia – 256 GB, UFS 3.1)
To find the exact electrical characteristics (voltage, timing, pinout), you need to search by a part number. Below are common series that use the BGA 254 package:
Example A: Samsung (KLUEG/E/F series)
Example B: Kioxia (formerly Toshiba)
Beware of third-party aggregators. Always source datasheets from: Ufs Bga 254 Datasheet
If a website offers a "UFS BGA 254 Datasheet" without requiring a valid NDA or registration, it is likely incomplete or counterfeit.
Deep within the datasheet, beyond the peak throughput tables (often 1.5 GB/s for UFS 3.1), lies the power management state diagram. UFS BGA 254 defines several power modes: Active, Idle, Sleep, and Deep Sleep, but more critically, it defines HS-MODE (High Speed), PWM-MODE (Pulse Width Modulated) for lower power, and HIBERNATE (HIBERN8).
In HIBERN8 mode, the M-PHY lanes are powered down to near-leakage current. The datasheet specifies precise exit latencies: from HIBERN8 to ACTIVE in less than 1ms. This is a game-changer for battery-operated devices. An eMMC device, when idle, still consumes milliamps to keep the interface alive. A UFS device in HIBERN8 consumes microamps. The datasheet provides the timings for the DME_HIBERNATE_ENTER and DME_HIBERNATE_EXIT primitives. For a systems architect, these timings dictate the optimal policy: one can aggressively power down the storage between file system transactions, achieving eMMC-like wake times with a fraction of the idle power. MTFC256GAOAMEA-WT (Micron – 256 GB, UFS 2
The first and most immediate revelation in the datasheet is the physical interface: 254 balls arranged in a 0.5mm pitch BGA (Ball Grid Array). Unlike its predecessor (eMMC, often 153 or 169 balls), the UFS BGA 254 package is a study in power and pin efficiency. The increase in ball count is not arbitrary; it accommodates two high-speed lanes (Lane 1 and Lane 2) for the M-PHY physical layer, multiple power supply rails (VCC for NAND, VCCQ for interface, VCCQ2 for 1.8V I/O), and dedicated reference clocks.
Crucially, the datasheet details the M-PHY Gear configuration (e.g., Gear 1, 2, 3, 4, up to 5.8 Gbps per lane). Where an eMMC datasheet speaks of a single 8-bit parallel bus with setup/hold times, the UFS BGA 254 datasheet speaks of differential line pairs (RXN/RXP) and unidirectional lanes. This is a physical acknowledgment that storage is no longer a peripheral; it is a peer on the high-speed interconnect. The layout engineer must treat these traces as RF transmission lines, complete with impedance control (typically 50Ω differential) and length matching within 0.5mm – a stark contrast to the forgiving parallel bus of eMMC.
Fine Print: These numbers assume:
The "UFS BGA 254 Datasheet" appears to refer to a specific type of semiconductor packaging used for Universal Flash Storage (UFS) memory chips. UFS is a type of non-volatile memory used in many modern devices, including smartphones, tablets, and other mobile electronics. BGA (Ball Grid Array) 254 refers to the packaging type and the number of pins or balls on the package.
Here is a general report based on commonly available information about UFS and BGA packaging:
The UFS BGA 254 Datasheet lists theoretical performance, but real-world numbers depend on host controller and PCB layout. Example B: Kioxia (formerly Toshiba) Beware of third-party