Vpm2sm Datasheet -

Reference resistor divider guidance:

Decoupling and layout:

| Parameter | Symbol | Min | Typ | Max | Unit | |-----------|--------|-----|-----|-----|------| | Reverse Stand-off Voltage | V_RWM | - | 2.0 | 2.0 | V | | Breakdown Voltage (I_T = 1mA) | V_BR | 2.2 | 2.4 | 2.6 | V | | Test Current for V_BR | I_T | 1.0 | - | - | mA | | Maximum Clamping Voltage (I_PP = 50A) | V_C | - | 3.4 | 3.8 | V | | Reverse Leakage Current (at V_RWM) | I_R | - | 5 | 20 | μA | | Junction Capacitance (at 0V, 1MHz) | C_J | - | 1200 | 1500 | pF | vpm2sm datasheet

Critical note: The high junction capacitance (≈1200pF) makes the VPM2SM unsuitable for high-speed data lines (e.g., USB 2.0, Ethernet). Use low-capacitance TVS arrays for those applications.

If you cannot find the exact vpm2sm datasheet from your preferred vendor, use these equivalents (all with matching 2.0V V_RWM, 600W, SMB package): Reference resistor divider guidance:

| Manufacturer | Part Number | Difference | |--------------|-------------|-------------| | Littelfuse | SMBJ2.0A | Uni-directional | | Littelfuse | SMBJ2.0CA | Bi-directional | | Vishay | SMBJ2.0A-E3 | - | | ON Semi | SZ1SMB2.0AT3G | Automotive grade | | Bourns | SMBJ2.0A | - | | Diodes Inc. | SMBJ2.0A-13-F | - |

Warning: Do not confuse "VPM2SM" with "P4SMA2.0A" (400W, DO-214AC package) or "SMCJ2.0A" (1500W, larger DO-214AB). Decoupling and layout: | Parameter | Symbol |

A phototransistor has internal gain (higher output current) but is much slower (tens of microseconds). The VPM2SM photodiode is faster (nanoseconds) but requires an external amplifier. For logic-level output, use a comparator after the amplifier.

According to the VPM2SM datasheet, exceeding any of the following values will permanently damage the component:

Design tip: Always include a series resistor or current-limiting circuit to prevent excessive forward current if the diode is accidentally forward-biased.